Author(s): Zhang, SY (Zhang, Shiyu); Liu, Z (Liu, Zeng); Liu, YY (Liu, Yuanyuan); Zhi, YS (Zhi, Yusong); Li, PG (Li, Peigang); Wu, ZP (Wu, Zhenping); Tang, WH (Tang, Weihua)

Source: MICROMACHINES Volume: 12 Issue: 3 Article Number: 259 DOI: 10.3390/mi12030259 Published: MAR 2021

Abstract: In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga2O3 crystal substrate. At the current stage, for high resistance un-doped Ga2O3 films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (R-on), Schottky barrier height (phi(B)), the ideal factor (n), series resistance (R-s) and the carrier concentration (N-d) by analyzing the current density-voltage (J-V) and capacitance-voltage (C-V) curves of the Ga2O3-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.

Accession Number: WOS:000633904100001

PubMed ID: 33802423

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Liu, Zeng         W-6460-2019         0000-0003-3215-7929

eISSN: 2072-666X

Full Text: https://www.mdpi.com/2072-666X/12/3/259