Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films
Author(s): Zhang, S (Zhang, Shuo); Liu, BY (Liu, Bingyao); Ren, F (Ren, Fang); Yin, Y (Yin, Yue); Wang, YY (Wang, Yunyu); Chen, ZL (Chen, Zhaolong); Jiang, B (Jiang, Bei); Liu, BZ (Liu, Bingzhi); Liu, ZT (Liu, Zhetong); Sun, JY (Sun, Jingyu); Liang, M (Liang, Meng); Yan, JC (Yan, Jianchang); Wei, TB (Wei, Tongbo); Yi, XY (Yi, Xiaoyan); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Gao, P (Gao, Peng); Liu, ZF (Liu, Zhongfan); Liu, ZQ (Liu, Zhiqiang)
Source: SMALL Article Number: 2100098 DOI: 10.1002/smll.202100098 Early Access Date: MAR 2021
Abstract: The nitride films with high indium (In) composition play a crucial role in the fabrication of In-rich InGaN-based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain-modulated growth method, namely the graphene (Gr)-nanorod (NR) enhanced quasi-van der Waals epitaxy, is proposed to increase the In composition in InGaN alloy. The lattice transparency of Gr enables constraint of in-plane orientation of nitride film and epitaxial relationships at the heterointerface. The Gr interlayer together with NRs buffer layer substantially reduces the stress of the GaN film by 74.4%, from 0.9 to 0.23 GPa, and thus increases the In incorporation by 30.7%. The first principles calculations confirm that the release of strain accounts for the dramatic improvement. The photoluminescence peak of multiple quantum wells shifts from 461 to 497 nm and the functionally small-sized cyan light-emitting diodes of 7 x 9 mil(2) are demonstrated. These findings provide an efficient approach for the growth of In-rich InGaN film and extend the applications of nitrides in advanced optoelectronic, photovoltaic, and thermoelectric devices.
Accession Number: WOS:000635225100001
PubMed ID: 33788402
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Zhang, Shuo 0000-0002-7262-8847
ISSN: 1613-6810
eISSN: 1613-6829
Full Text: https://onlinelibrary.wiley.com/doi/10.1002/smll.202100098