A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films

2021-04-23

 

Author(s): Zhang, S (Zhang, Shuo); Liu, BY (Liu, Bingyao); Ren, F (Ren, Fang); Yin, Y (Yin, Yue); Wang, YY (Wang, Yunyu); Chen, ZL (Chen, Zhaolong); Jiang, B (Jiang, Bei); Liu, BZ (Liu, Bingzhi); Liu, ZT (Liu, Zhetong); Sun, JY (Sun, Jingyu); Liang, M (Liang, Meng); Yan, JC (Yan, Jianchang); Wei, TB (Wei, Tongbo); Yi, XY (Yi, Xiaoyan); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Gao, P (Gao, Peng); Liu, ZF (Liu, Zhongfan); Liu, ZQ (Liu, Zhiqiang)

Source: SMALL Article Number: 2100098 DOI: 10.1002/smll.202100098 Early Access Date: MAR 2021

Abstract: The nitride films with high indium (In) composition play a crucial role in the fabrication of In-rich InGaN-based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain-modulated growth method, namely the graphene (Gr)-nanorod (NR) enhanced quasi-van der Waals epitaxy, is proposed to increase the In composition in InGaN alloy. The lattice transparency of Gr enables constraint of in-plane orientation of nitride film and epitaxial relationships at the heterointerface. The Gr interlayer together with NRs buffer layer substantially reduces the stress of the GaN film by 74.4%, from 0.9 to 0.23 GPa, and thus increases the In incorporation by 30.7%. The first principles calculations confirm that the release of strain accounts for the dramatic improvement. The photoluminescence peak of multiple quantum wells shifts from 461 to 497 nm and the functionally small-sized cyan light-emitting diodes of 7 x 9 mil(2) are demonstrated. These findings provide an efficient approach for the growth of In-rich InGaN film and extend the applications of nitrides in advanced optoelectronic, photovoltaic, and thermoelectric devices.

Accession Number: WOS:000635225100001

PubMed ID: 33788402

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Zhang, Shuo                  0000-0002-7262-8847

ISSN: 1613-6810

eISSN: 1613-6829

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/smll.202100098



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明