A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth

2021-04-23

 

Author(s): Wang, XW (Wang, Xiaowei); Liang, F (Liang, Feng); Zhao, DG (Zhao, De-gang); Liu, ZS (Liu, Zongshun); Zhu, JJ (Zhu, Jianjun); Peng, LY (Peng, Liyuan); Yang, J (Yang, Jing)

Source: APPLIED SURFACE SCIENCE Volume: 548 Article Number: 149272 DOI: 10.1016/j.apsusc.2021.149272 Published: MAY 15 2021

Abstract: Two series InGaN/GaN MQWs samples were prepared by metal-organic chemical vapor deposition (MOCVD) to study the effect of TMIn flow and pressure on structural parameters, emission propertied and surface morphology of InGaN well layer. This study revealed that both high In flow rate and high pressure will improve the incorporation of atoms undergoing material deterioration. However, an elevated pressure will expedite the incorporation of indium atoms while maintaining the surface morphology of InGaN well layer under low TMIn flow. For those InGaN QWs exhibiting fixed In composition and thickness, this study proposed to decrease the TMIn flow to improve the homogeneity and quality of InGaN layer, while increasing pressure to keep the In content unchanged.

Accession Number: WOS:000624487000002

ISSN: 0169-4332

eISSN: 1873-5584

Full Text: https://www.sciencedirect.com/science/article/pii/S0169433221003482?via%3Dihub



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明