The influence of temperature and TMGa flow rate on the quality of p-GaN
Author(s): Cao, ZK (Cao, Zikun); Wang, XW (Wang, Xiaowei); Zhao, DG (Zhao, Degang); Liang, F (Liang, Feng); Liu, ZS (Liu, Zongshun)
Source: AIP ADVANCES Volume: 11 Issue: 3 Article Number: 035109 DOI: 10.1063/5.0045393 Published: MAR 1 2021
Abstract: This paper studies in detail the influence of growth temperature and the TMGa flow rate on the quality of p-GaN. Through Hall and atomic force microscope tests on six samples of two growth series, we can find that a higher growth temperature and lower TMGa flow rate can enhance the electrical properties and improve the surface morphology of the material, that is, lower resistivity, greater carrier concentration, higher mobility, and lower roughness. These two growth methods share similar processes to improve material properties. The enhancement of gallium atom migration is the reason for the improvement in surface morphology. The reduction in carbon impurities is key to improving electrical device performance through secondary ion mass spectroscopy and room temperature photoluminescence tests. Moreover, the severity of contamination on the sample surface is positively correlated with the roughness of the sample, which further illustrates the importance of better surface quality.
Accession Number: WOS:000630480600009
eISSN: 2158-3226
