Author(s): Yan, YX (Yan, Yongxu); Ran, WH (Ran, Wenhao); Li, ZX (Li, Zhexin); Li, LL (Li, Linlin); Lou, Z (Lou, Zheng); Shen, GZ (Shen, Guozhen)

Source: NANO RESEARCH DOI: 10.1007/s12274-021-3367-2 Early Access Date: MAR 2021

Abstract: Cd3As2 nanowires (NWs) have great potential in the near-infrared (NIR) photodetection field due to their excellent optoelectronic properties as a typical Dirac semimetal. However, the existence of surface oxidization limits their photoresponse performance for practical applications. Here, we modified the surface of Cd3As2 NWs with sulfur to prevent surface oxidizing and optimize the bandgap structure to improve the photoresponse performance. The S-modified Cd3As2 samples existed as core/shell Cd3As2/CdS NWs and the corresponding single NW device showed a responsivity of 0.95 A/W in the NIR band at a 0 V bias, which is three orders of magnitude higher than that of an unmodified NW. This study provides an efficient and universally applicable way to prevent semimetals nanostructures from oxidizing and promote their optoelectronic properties.

Accession Number: WOS:000624410400009

ISSN: 1998-0124

eISSN: 1998-0000

Full Text: https://link.springer.com/article/10.1007%2Fs12274-021-3367-2