Author(s): Ma, XL (Ma, Xiaole); Guo, J (Guo, Jie); Hao, RT (Hao, Ruiting); Wei, GS (Wei, Guoshuai); Chang, FR (Chang, Faran); Li, Y (Li, Yong); Li, XM (Li, Xiaoming); Jiang, DW (Jiang, Dongwei); Wang, GW (Wang, Guowei); Xu, YQ (Xu, Yingqiang); Niu, ZC (Niu, Zhichuan)

Source: OPTICAL MATERIALS EXPRESS Volume: 11 Issue: 2 Pages: 585-591 DOI: 10.1364/OME.416272 Published: FEB 1 2021

Abstract: In this paper, we demonstrate a bias-selective short/mid wave dual-band infrared detector based on GaSb bulk materials and InAs/GaSb type-II superlattices with 50% cut-off wavelengths of 1.55 mu m and 4.62 mu m respectively. At 77 K, the short wave channel exhibited a peak quantum efficiency of 35.86% at 1.43 mu m and a dark current density of 8.41 x 10(-5) A/cm(2) under the forward 5.0 V bias, thereby providing a Johnson-noise-limited detectivity of 7.63 x 10(11) cm . Hz(1/2)/W. The mid-wave channel showed a quantum efficiency of 10.45% at 4.0 mu m and dark current density of 4.17 x 10(-3) A/cm(2) under -1.35 V bias, resulting in a detectivity of4.05 x 10(10) cm . Hz(1/2)/W. The cross-talk was very low in the short wave channel, but existed in the mid wave channel originated from the contribution of the residual built-in electric field in the short wave channel. Furthermore, the schematic band alignment of N-I-P-P-I-N back-to-back structure was also discussed for further optimization. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000615987600015

ISSN: 2159-3930

Full Text: https://www.osapublishing.org/ome/fulltext.cfm?uri=ome-11-2-585&id=447058