Author(s): Mu, JW (Mu, Jingwei); Huang, SY (Huang, Shaoyun); Liu, ZH (Liu, Zhi-Hai); Li, WJ (Li, Weijie); Wang, JY (Wang, Ji-Yin); Pan, D (Pan, Dong); Huang, GY (Huang, Guang-Yao); Chen, YJ (Chen, Yuanjie); Zhao, JH (Zhao, Jianhua); Xu, HQ (Xu, H. Q.)

Source: NANOSCALE Volume: 13 Issue: 7 Pages: 3983-3990 DOI: 10.1039/d0nr08655j Published: FEB 21 2021

Abstract: Quantum dots (QDs) made from semiconductors are among the most promising platforms for the development of quantum computing and simulation chips, and they have the advantages of high density integration and compatibility with the standard semiconductor chip fabrication technology compared to other platforms. However, the development of a highly tunable semiconductor multiple QD system still remains a major challenge. Here, we demonstrate the realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire via a fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are obtained for the QQD. It is shown that these current lines arise from and can be individually assigned to resonant electron transport through the energy levels of different QDs. Benefitting from the excellent gate tunability, we also demonstrate the tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all four QDs are energetically in resonance, respectively, with the Fermi level of the source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on this model show good agreement with the experiments. Our work provides solid experimental evidence that narrow bandgap semiconductor nanowire multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations of complex many-body systems.

Accession Number: WOS:000621767000008

PubMed ID: 33595588

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Huang, Shaoyun         B-5018-2012         0000-0002-2222-3999

Pan, Dong                  0000-0003-2067-6983

Xu, Hongqi         D-4248-2017         0000-0001-6434-2569

ISSN: 2040-3364

eISSN: 2040-3372

Full Text: https://pubs.rsc.org/en/content/articlelanding/2021/NR/D0NR08655J#!divAbstract