Author(s): Liu, B (Liu, Bin); Liu, JY (Liu, Jingyu); Lv, LF (Lv, Longfeng); Hou, YB (Hou, Yanbing); Shen, JL (Shen, Jingling); Zhang, B (Zhang, Bo)

Source: ACS APPLIED ELECTRONIC MATERIALS Volume: 3 Issue: 2 Pages: 1006-1014 DOI: 10.1021/acsaelm.0c01088 Published: FEB 23 2021

Abstract: A stable terahertz (THz) photo-writable electrical-erasable memory from a CsPbI3:Ag (Ag-nanoparticle-added CsPbI3)/SnO2/PEDOT:PSS hybrid sample was investigated. A significant THz modulation depth of CsPbI3:Ag/PEDOT:PSS was obtained with low optical excitation intensity. After the insertion of a SnO2 film between CsPbI3 and PEDOT:PSS, a 34% THz modulation depth was reached under optical excitation, and the recovery time of modulated THz transmission was considerably prolonged on removal of laser excitation. On applying a bias voltage to the CsPbI3:Ag/SnO2/PEDOT:PSS structure, THz transmission was quickly returned. THz transmissions were applied to be coded pixel units and were programmed to store the image signal. Based on this, a stable photo-memory functionality was accomplished with the CsPbI3:Ag/SnO2/PEDOT:PSS composite sample using a method for in situ electrical-erasing information stored in both the spectrum and image.

Accession Number: WOS:000623048300051

eISSN: 2637-6113

Full Text: https://pubs.acs.org/doi/10.1021/acsaelm.0c01088