High-Performance Phototransistors Based on MnPSe3 and Its Hybrid Structures with Au Nanoparticles
Author(s): Han, X (Han, Xu); Song, PB (Song, Pengbo); Xing, J (Xing, Jie); Chen, Z (Chen, Zhong); Li, DY (Li, Danyang); Xu, GY (Xu, Guangyuan); Zhao, XJ (Zhao, Xiaojun); Ma, FY (Ma, Fangyuan); Rong, DK (Rong, Dongke); Shi, YG (Shi, Youguo); Islam, MR (Islam, Md Rasidul); Liu, K (Liu, Kong); Huang, Y (Huang, Yuan)
Source: ACS APPLIED MATERIALS & INTERFACES Volume: 13 Issue: 2 Pages: 2836-2844 DOI: 10.1021/acsami.0c19530 Published: JAN 20 2021
Abstract: Layered metal thiophosphates with a general formula MPX3 (M is a group VIIB or VIII element and X is a chalcogen) have emerged as a novel member in a two-dimensional (2D) family with fascinating physical and chemical properties. Herein, the photoelectric performance of the few-layer MnPSe3 was studied for the first time. The multilayer MnPSe3 shows p-type conductivity and its field-effect transistor delivers an ultralow dark current of about 0.1 pA. The photoswitching ratio reaches similar to 10(3) at a wavelength of 375 nm, superior to that of other thiophosphates. A responsivity and detectivity of 392.78 mA/W and 2.19 x 10(9) Jones, respectively, have been demonstrated under irradiation of 375 nm laser with a power intensity of 0.1 mW/cm(2). In particular, the photocurrent can be remarkably increased up to 30 times by integrating a layer of Au nanoparticle array at the bottom of the MnPSe, layer. The metal-semiconductor interfacial electric field and the strain-induced flexoelectric polarization field caused by the underlying nanorugged Au nanoparticles are proposed to contribute together to the significant current improvement.
Accession Number: WOS:000612551400065
PubMed ID: 33426871
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Xing, Jie 0000-0001-5350-6206
ISSN: 1944-8244
eISSN: 1944-8252
