Author(s): Zhao, J (Zhao, Jie); Li, WJ (Li, Weijiang); Wang, LL (Wang, Lulu); Wei, XC (Wei, Xuecheng); Wang, JX (Wang, Junxi); Wei, TB (Wei, Tongbo)

Source: PHOTONICS Volume: 8 Issue: 2 Article Number: 42 DOI: 10.3390/photonics8020042 Published: FEB 2021

Abstract: We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) beta-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on beta-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/beta-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on beta-Ga2O3 substrate.

Accession Number: WOS:000622994800001

eISSN: 2304-6732

Full Text: https://www.mdpi.com/2304-6732/8/2/42