Author(s): Wang, BB (Wang, Baibin); Liang, F (Liang, Feng); Zhao, DG (Zhao, Degang); Ben, YH (Ben, Yuhao); Yang, J (Yang, Jing); Chen, P (Chen, Ping); Liu, ZS (Liu, Zongshun)

Source: OPTICS EXPRESS Volume: 29 Issue: 3 Pages: 3685-3693 DOI: 10.1364/OE.416424 Published: FEB 1 2021

Abstract: Yellow Luminescence (YL) band and blue luminescence (BL) band in a studied unintentionally doped GaN sample show a transient behaviour where the observed luminescence intensities change with the exposure time of the sample under 325 nm laser beam excitation at 10-300 K. Such an intensity variation is accompanied with a red-shift for YL peak at 10-140 K and one for BL peak at 140 K. We propose that such behaviours are related to the chemical transformations of YL-related C-N and CNON defects, and BL-related C-N-H-i and CNON-H-i defects during the exposure. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000614617700060

ISSN: 1094-4087

Full Text: https://www.osapublishing.org/oe/fulltext.cfm?uri=oe-29-3-3685&id=446822