Author(s): Niu, D (Niu, Di); Wang, Q (Wang, Quan); Li, W (Li, Wei); Chen, CX (Chen, Changxi); Xu, JK (Xu, Jiankai); Jiang, LJ (Jiang, Lijuan); Feng, C (Feng, Chun); Xiao, HL (Xiao, Hongling); Wang, Q (Wang, Qian); Xu, XG (Xu, Xiangang); Wang, XL (Wang, Xiaoliang)

Source: MICROMACHINES Volume: 12 Issue: 2 Article Number: 131 DOI: 10.3390/mi12020131 Published: FEB 2021

Abstract: The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease. However, the repair process will gradually recover the electrical properties. We study different repair methods and different repair conditions, propose the best repair conditions, and further fabricate the p-GaN HEMTs devices. The threshold voltage of the fabricated device is 1.6 V, the maximum gate voltage is 7 V, and the on-resistance is 23 omega center dot mm. The device has a good performance, which proves that the repair conditions can be successfully applied to the fabricate of the p-GaN HEMT devices.

Accession Number: WOS:000622817500001

PubMed ID: 33530451

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Wang, Xiaoliang                  0000-0003-4559-0553

eISSN: 2072-666X

Full Text: https://www.mdpi.com/2072-666X/12/2/131