Author(s): Liu, LJ (Liu, Lijie); Zhao, YW (Zhao, Youwen); Huang, Y (Huang, Yong); Zhao, Y (Zhao, Yu); Xie, H (Xie, Hui); Wang, J (Wang, Jun); Wang, YL (Wang, Yingli); Shen, GY (Shen, Guiying)

Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 125 Article Number: 105624 DOI: 10.1016/j.mssp.2020.105624 Published: APR 2021

Abstract: Undoped InAs (100) substrate wafers prepared by liquid encapsulated Czochralski (LEC) and vertical temperature gradient freezing (VGF) methods have been studied and compared in their epi-ready state. The substrate surface defects have been analyzed by surface scanner KLA candela, Energy Dispersive X-Ray Spectroscopy (EDAX), Total-reflection X-ray fluorescence spectroscopy (TXRF), with an aim to find the contrast between LEC-InAs and VGF-InAs substrates. It is found that the VGF wafers have lower surface point defects and good stoichiometry compared with the LEC-wafer. VGF-InAs is more favorable to LEC-InAs for oxide thermal desorption and midwavelength infrared (MWIR) epitaxial layer growth with low defect density.

Accession Number: WOS:000618869700001

ISSN: 1369-8001

eISSN: 1873-4081

Full Text: https://www.sciencedirect.com/science/article/pii/S1369800120315614?via%3Dihub