Author(s): Hou, YF (Hou, Yufei); Zhao, DG (Zhao, Degang); Liang, F (Liang, Feng); Yang, J (Yang, Jing); Chen, P (Chen, Ping); Liu, ZS (Liu, Zongshun)

Source: VACUUM Volume: 186 Article Number: 110049 DOI: 10.1016/j.vacuum.2021.110049 Published: APR 2021

Abstract: The injection of holes has an important impact on the performance of InGaN-based green laser diodes (LDs). In this work, we propose a new structure with InGaN hole reservoir layer (HRL) inserted between the last quantum barrier and the upper waveguide to improve the hole injection. It is found that the hole injection current is significantly increased due to the reduction of the hole effective barrier height. Furthermore, lower threshold current and higher output power are obtained, and the optical field leakage is effectively suppressed. Besides, the influences of thickness and In composition of the HRL are also investigated. It is more favorable to improve the properties of LDs when the HRL has a quite low-In content and a thickness of only nearly 11 nm.

Accession Number: WOS:000620647100011

Conference Title: 12th International Symposium on Applied Plasma Science (ISAPS)

Conference Date: SEP 24-28, 2019

Conference Location: Univ Yamanashi, Yamanashi, JAPAN

Conference Sponsors: Inst Appl Plasma Sci, Univ Yamanashi, Chulalongkorn Univ, Osaka Univ, JWRI, Univ Stuttgart, IRS, Warsaw Univ Technol, Dalian Univ Technol

Conference Host: Univ Yamanashi

ISSN: 0042-207X

eISSN: 1879-2715

Full Text: https://www.sciencedirect.com/science/article/pii/S0042207X21000063?via%3Dihub