Author(s): Sun, S (Sun, Song); Hu, YF (Hu, Yifeng); Lai, TS (Lai, Tianshu); Zhu, XQ (Zhu, Xiaoqin)

Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI: 10.1007/s10854-021-05358-y Early Access Date: FEB 2021

Abstract: The effects of Mg35Sb65 layer on the thermal stability and thickness change rate of Ge2Sb2Te5 in superlattice films were studied. Compared with monolayer Ge2Sb2Te5 films, Mg35Sb65/Ge2Sb2Te5 films had higher resistance and crystallization temperature. The thermal stability and data retention capability were improved significantly. The fundamental reason of the change of film resistance was explained from the change of energy band gap. According to the reliability of phase change memory devices, the thickness change rate of thin films was analyzed in detail.

Accession Number: WOS:000615763000004

ISSN: 0957-4522

eISSN: 1573-482X

Full Text: https://link.springer.com/article/10.1007%2Fs10854-021-05358-y