Author(s): Chu, JY (Chu, Jiayan); Wang, Q (Wang, Quan); Jiang, LJ (Jiang, Lijuan); Feng, C (Feng, Chun); Li, W (Li, Wei); Liu, HX (Liu, Hongxin); Xiao, HL (Xiao, Hongling); Wang, XL (Wang, Xiaoliang)

Source: JOURNAL OF ELECTRONIC MATERIALS DOI: 10.1007/s11664-021-08778-y Early Access Date: FEB 2021

Abstract: A high quality Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) structure was grown on a 2-inch GaN substrate by metalorganic chemical vapor deposition (MOCVD). In order to protect the stability of the GaN substrate, this paper proposes a two-stage heating method for surface stabilization. This method can effectively protect the GaN substrate during the heating treatment and is conducive to obtaining a smooth film surface and low dislocation density. Root-mean-square (RMS) roughness of the structure was as low as 0.12 nm over a 10 x 10 mu m(2) region. The dislocation density was approximately on the order of 10(5) cm(-2). The HEMT structure exhibited a room temperature two-dimensional electron gas (2DEG) mobility up to 2396 cm(2)/V center dot s with a 2DEG density of 0.89 x 10(13) cm(-2). This is the highest mobility ever reported. This high 2DEG mobility is partly attributed to the smooth surface and good crystal quality.

Accession Number: WOS:000617844700003

ISSN: 0361-5235

eISSN: 1543-186X

Full Text: https://link.springer.com/article/10.1007%2Fs11664-021-08778-y