Author(s): Gu, W (Gu, Wen); Lu, Y (Lu, Yi); Lin, RY (Lin, Rongyu); Guo, WZ (Guo, Wenzhe); Zhang, ZH (Zhang, Zihui); Ryou, JH (Ryou, Jae-Hyun); Yan, JC (Yan, Jianchang); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Li, XH (Li, Xiaohang)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 54 Issue: 17 Article Number: 175104 DOI: 10.1088/1361-6463/abdefc Published: APR 29 2021

Abstract: The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al0.3Ga0.7N EBL with a doping concentration of 1 x 10(20) cm(-3), the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing ultraviolet LED structures.

Accession Number: WOS:000618025200001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Li, Xiaohang         H-3403-2016         0000-0002-4434-365X

ISSN: 0022-3727

eISSN: 1361-6463

Full Text: https://iopscience.iop.org/article/10.1088/1361-6463/abdefc