Author(s): Li, RZ (Li, Runze); Li, YC (Li, Yucai); Sheng, Y (Sheng, Yu); Wang, KY (Wang, Kaiyou)

Source: CHINESE PHYSICS B Volume: 30 Issue: 2 Article Number: 028506 DOI: 10.1088/1674-1056/abcf9d Published: FEB 2021

Abstract: We demonstrate that radio frequency (RF) magnetron sputtering technique can modify the perpendicular magnetic anisotropy (PMA) of Pt/Co/normal metal (NM) thin films. Influence of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic films. The magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer thickness. According to the stopping and range of ions in matter (SRIM) simulation results, defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering, which can account for the weakness of PMA. The amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque (SOT) induced magnetization switching also can be modified. Our study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.

Accession Number: WOS:000616083000001

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/abcf9d