Author(s): Chu, XL (Chu, Xu-Long); Liu, Z (Liu, Zeng); Zhi, YS (Zhi, Yu-Song); Liu, YY (Liu, Yuan-Yuan); Zhang, SH (Zhang, Shao-Hui); Wu, C (Wu, Chao); Gao, A (Gao, Ang); Li, PG (Li, Pei-Gang); Guo, DY (Guo, Dao-You); Wu, ZP (Wu, Zhen-Ping); Tang, WH (Tang, Wei-Hua)

Source: CHINESE PHYSICS B Volume: 30 Issue: 1 Article Number: 017302 DOI: 10.1088/1674-1056/abc546 Published: JAN 2021

Abstract: We report the edge-defined-film-fed (EFG)-grown beta-Ga2O3-based Schottky photodiodes. The device has a reverse leakage current of similar to nA and a rectified ratio of similar to 10(4) at +/- 5 V. In addition, the photodiode detector shows a dark current of 0.3 pA, a photo-responsivity (R) of 2.875 mA/W, a special detectivity (D*) of 10(10) Jones, and an external quantum efficiency (EQE) of 1.4% at zero bias, illustrating a self-powered operation. This work may advance the development of the Ga2O3-based Schottky diode solar-blind photodetectors.

Accession Number: WOS:000611520800001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Liu, Zeng         W-6460-2019         0000-0003-3215-7929

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/abc546