Author(s): Wang, XM (Wang, Xumin); Huang, SY (Huang, Shaoyun); Wang, JY (Wang, Ji-Yin); Pan, D (Pan, Dong); Zhao, JH (Zhao, Jianhua); Xu, HQ (Xu, H. Q.)

Source: NANOSCALE Volume: 13 Issue: 2 Pages: 1048-1054 DOI: 10.1039/d0nr07115c Published: JAN 14 2021

Abstract: A single quantum dot serving as a charge sensor is integrated to scalable double quantum dots using local top finger-gate techniques on two neighboring pure-phase InAs nanowires. The single dot built on one nanowire capacitively couples one of the double dots constructed on another nanowire via a metal bridge gate. The charge occupation states of double quantum dots can be accurately monitored by the sensor even in a few-electron regime in which transport tunneling current through the double dots vanishes. In the tunneling spectroscopy of double dots, electron inter dot tunneling process is absent; however, it can be illustrated by the sensor in terms of a transconductance line between the two closest triple points. Thus, tunnel coupling strength between the double dots is quantitatively extracted from the detectable charge transition. The highly tunable multiple quantum dots with integrated charge sensors on InAs nanowires could be an essential building block for quantum information processing technology.

Accession Number: WOS:000610368100047

PubMed ID: 33393583

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

HUANG, SHAOYUN         B-5018-2012         0000-0002-2222-3999

Xu, Hongqi         D-4248-2017         0000-0001-6434-2569

Pan, Dong                  0000-0003-2067-6983

ISSN: 2040-3364

eISSN: 2040-3372

Full Text: https://pubs.rsc.org/en/content/articlelanding/2021/NR/D0NR07115C#!divAbstract