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In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

2021-02-18

 

Author(s): Soopy, AKK (Soopy, Abdul Kareem K.); Li, ZN (Li, Zhaonan); Tang, TY (Tang, Tianyi); Sun, JQ (Sun, Jiaqian); Xu, B (Xu, Bo); Zhao, C (Zhao, Chao); Najar, A (Najar, Adel)

Source: NANOMATERIALS Volume: 11 Issue: 1 Article Number: 126 DOI: 10.3390/nano11010126 Published: JAN 2021

Abstract: This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Accession Number: WOS:000610660600001

PubMed ID: 33430484

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

KALATHIL SOOPY, ABDUL KAREEM                  0000-0002-3422-4374

eISSN: 2079-4991

Full Text: https://www.mdpi.com/2079-4991/11/1/126



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