In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching
Author(s): Soopy, AKK (Soopy, Abdul Kareem K.); Li, ZN (Li, Zhaonan); Tang, TY (Tang, Tianyi); Sun, JQ (Sun, Jiaqian); Xu, B (Xu, Bo); Zhao, C (Zhao, Chao); Najar, A (Najar, Adel)
Source: NANOMATERIALS Volume: 11 Issue: 1 Article Number: 126 DOI: 10.3390/nano11010126 Published: JAN 2021
Abstract: This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
Accession Number: WOS:000610660600001
PubMed ID: 33430484
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
KALATHIL SOOPY, ABDUL KAREEM 0000-0002-3422-4374
eISSN: 2079-4991
Full Text: https://www.mdpi.com/2079-4991/11/1/126