A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Vertical strain and electric field tunable band alignment in type-II ZnO/MoSSe van der Waals heterostructures

2021-02-18

 

Author(s): Wang, P (Wang, Pan); Zong, YX (Zong, Yixin); Liu, H (Liu, Hao); Wen, HY (Wen, Hongyu); Liu, YY (Liu, Yueyang); Wu, HB (Wu, Hai-Bin); Xia, JB (Xia, Jian-Bai)

Source: PHYSICAL CHEMISTRY CHEMICAL PHYSICS Volume: 23 Issue: 2 Pages: 1510-1519 DOI: 10.1039/d0cp05354f Published: JAN 14 2021

Abstract: The van der Waals heterostructure (vdWH) has attracted widespread attention as a unique structure for future electronic and optoelectronic devices. In this paper, we constructed the ZnO-SeMoS and ZnO-SMoSe vdWHs and systematically investigated their electronic structures and band alignments considering vertical strain and external electric field effects. It is found that the ZnO-SeMoS and ZnO-SMoSe vdWHs both exhibit type-II band alignment with indirect band gaps of 1.31 and 0.63 eV respectively, depending on the interface characteristics. What's more, the band alignment of these two heterostructures can be tuned to type I or type III, and their band gap can be modified to direct feature by applying vertical strain and an electric field. The results reveal that ZnO/MoSSe vdWHs have promising potential in multi-functional nanodevices, and provide a way to modify the electronic properties of Janus-based heterojunctions using interface characteristics.

Accession Number: WOS:000610150200073

PubMed ID: 33400744

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Wang, Pan                  0000-0002-4081-627X

ISSN: 1463-9076

eISSN: 1463-9084

Full Text: https://pubs.rsc.org/en/content/articlelanding/2021/CP/D0CP05354F#!divAbstract



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明