Author(s): Chen, YJ (Chen, Yuanjie); Huang, SY (Huang, Shaoyun); Pan, D (Pan, Dong); Xue, JH (Xue, Jianhong); Zhang, L (Zhang, Li); Zhao, JH (Zhao, Jianhua); Xu, HQ (Xu, H. Q.)

Source: NPJ 2D MATERIALS AND APPLICATIONS Volume: 5 Issue: 1 Article Number: 3 DOI: 10.1038/s41699-020-00184-y Published: JAN 4 2021

Abstract: A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

Accession Number: WOS:000607110700003

eISSN: 2397-7132

Full Text: https://www.nature.com/articles/s41699-020-00184-y