Author(s): Hou, YF (Hou, Yufei); Zhao, DG (Zhao, Degang); Liang, F (Liang, Feng); Wang, XW (Wang, Xiaowei); Yang, J (Yang, Jing); Chen, P (Chen, Ping); Liu, ZS (Liu, Zongshun)

Source: OPTICAL MATERIALS Volume: 110 Article Number: 110477 DOI: 10.1016/j.optmat.2020.110477 Published: DEC 2020

Abstract: A graded-compositional waveguide structure is proposed to improve the optical field distribution of InGaN-based green laser diodes (LDs). It is found that the optical field leaking into the GaN substrate is suppressed obviously when using the graded-compositional upper and lower waveguide. Owing to the enhancement of refractive index contrast between the waveguide layer and the cladding layer, the optical field confinement factor increases, and the optical field is more concentrated near the active region. Besides, higher output power and lower threshold current are achieved due to reduced electron leakage and increased hole injection. This work provides a theoretical design method for obtaining high-performance InGaN-based green LDs.

Accession Number: WOS:000602386800006

ISSN: 0925-3467

eISSN: 1873-1252

Full Text: https://www.sciencedirect.com/science/article/pii/S092534672030817X?via%3Dihub