Author(s): Cao, ZK (Cao, Zi-Kun); Zhao, DG (Zhao, De-Gang); Yang, J (Yang, Jing); Zhu, JJ (Zhu, Jian-Jun); Liang, F (Liang, Feng); Liu, ZS (Liu, Zong-Shun)

Source: CHINESE PHYSICS B Volume: 30 Issue: 1 Article Number: 018103 DOI: 10.1088/1674-1056/abb801 Published: JAN 2021

Abstract: We propose a metal organic vapor phase epitaxy (MOVPE) method of pre-introducing TMIn during the growth of u-GaN to improve the subsequent growth of InGaN and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive InGaN growth rate. Further x-ray diffraction (XRD), photoluminescence (PL), and atomic force microscope (AFM) tests showed that the quality of InGaN is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when InGaN is grown, so as to improve the material quality.

Accession Number: WOS:000607316800001

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/abb801