Author(s): Yang, P (Yang, Ping); Zeng, XB (Zeng, Xiangbo)

Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI: 10.1007/s10854-020-05056-1 Early Access Date: JAN 2021

Abstract: Here various microstructure hydrogenated silicon has been used to passivate n-type silicon nanowires (SiNWs) and its core/shell solar cells. There are two differences in photoluminescence (PL) spectroscopy between SiNWs and passivated SiNWs: (a) the increased PL intensity and (b) a blue-shift of the PL peak. Through analyzing the PL results, we found the infrared band at 800 nm is associated with dangling bonds on SiNWs. The performance of the core/shell SiNWs solar cells are improved attributed to reduced surface defects by the intrinsic Si:H layer passivation. Furthermore, the passivation effect with a-Si:H layer is better than its counterpart with mu c-Si:H layer, which is due to the different microstructures especially the hydrogen-terminated.

Accession Number: WOS:000604333400014

ISSN: 0957-4522

eISSN: 1573-482X

Full Text: https://link.springer.com/article/10.1007/s10854-020-05056-1