Author(s): Yan, Y (Yan, Yong); Li, SS (Li, Shasha); Du, J (Du, Juan); Yang, H (Yang, Huai); Wang, XT (Wang, Xiaoting); Song, XH (Song, Xiaohui); Li, LX (Li, Lixia); Li, XP (Li, Xueping); Xia, CX (Xia, Congxin); Liu, YF (Liu, Yufang); Li, JB (Li, Jingbo); Wei, ZM (Wei, Zhongming)

Source: ADVANCED SCIENCE Article Number: 1903252 DOI: 10.1002/advs.201903252 Early Access Date: JAN 2021

Abstract: 2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate-induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The study of 2D vdWHs-based reversible unilateral rectifier is lacking, although it can give rise to a new degree of freedom for modulating the output state. Here, a InSe/GeSe vdWH-FET is constructed as a gate-controllable half wave rectifier. The device exhibits stepless adjustment from forward to backward rectifying performance, leading to multiple operation states of output level. Near-broken band alignment in the InSe/GeSe vdWH-FET is a crucial feature for high-performance reversible rectifier, which is shown to have backward and forward rectification ratio of 1:38 and 963:1, respectively. Being further explored as a new bridge rectifier, the InSe/GeSe device has great potential in future gate-controllable alternating current/direct current convertor. These results indicate that 2D vdWHs with near-broken band alignment can offer a pathway to simplify the commutating circuit and regulating speed circuit.

Accession Number: WOS:000604282200001

eISSN: 2198-3844

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/advs.201903252