Author(s): Li, N (Li, Nong); Chen, WQ (Chen, Weiqiang); Zheng, DN (Zheng, Danong); Sun, J (Sun, Ju); Jia, QX (Jia, Qingxuan); Jiang, JK (Jiang, Junkai); Wang, GW (Wang, Guowei); Jiang, DW (Jiang, Dongwei); Xu, YQ (Xu, Yingqiang); Niu, ZC (Niu, Zhichuan)

Source: INFRARED PHYSICS & TECHNOLOGY Volume: 111 Article Number: 103461 DOI: 10.1016/j.infrared.2020.103461 Published: DEC 2020

Abstract: We report our investigations to eliminate the bias dependency of quantum efficiency of nBn devices based on InGaAsSb bulk alloy aimed for extended short wavelength detection. Both a p-type doped AlGaSb barrier and a p-type doped top contact layer were employed. The 9 x 10(15) cm(-3)p-type doping of AlGaSb barrier slightly improves the bias dependency of quantum efficiency of nBn devices. The using of p-type doped top contact layer completely eliminated the band offset induced bias dependency of quantum efficiency and a 2.2% variation of quantum efficiency as applied reverse bias increases was discussed in terms of the effect of surface depletion region and junction depletion region.

Accession Number: WOS:000599522200010

ISSN: 1350-4495

eISSN: 1879-0275

Full Text: https://www.sciencedirect.com/science/article/pii/S1350449520305090?via%3Dihub