Author(s): Wu, ST (Wu, Shaoteng); Yi, XY (Yi, Xiaoyan); Tian, S (Tian, Shuang); Zhang, S (Zhang, Shuo); Liu, ZQ (Liu, Zhiqiang); Wang, LC (Wang, Liancheng); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)

Source: NANOTECHNOLOGY Volume: 32 Issue: 9 Article Number: 095606 DOI: 10.1088/1361-6528/abcc24 Published: FEB 26 2021

Abstract: Epitaxial horizontal nanowires (NWs) have attracted much attention due to their easily large-scale integration. From the reported literature, epitaxial growth is usually driven by minimization of strain between NW and substrate, which governs the growth along with specific crystallographic orientation. Here, we report the first homoepitaxial growth of horizontal GaN NWs from a surface-directed vapor-liquid-solid growth method. The NWs grow along with six symmetry-equivalent 1-100 (m-axis) directions, exhibiting a random 60 degrees/120 degrees kinked configuration. Owing to homoepitaxial growth, strain could be eliminated. From the obtained results, we suggest that the formation the horizontal NWs, and their growth direction /orientation is not directly related to the strain minimization. A general rule based on the epitaxial relationship and potential low-index growth orientation is proposed for understanding the arrangement of epitaxial horizontal NWs. It is deduced that kinking of the horizontal NWs was attributed to unintentional guided growth determined by the roughness of the substrates' surface. This study provides an insight for a better understanding of the evolution of epitaxial horizontal NWs, especially for the growth direction/orientation.

Accession Number: WOS:000596724900001

PubMed ID: 33212433

ISSN: 0957-4484

eISSN: 1361-6528

Full Text: https://iopscience.iop.org/article/10.1088/1361-6528/abcc24