Author(s): MaXueer, XY (MaXueer, Xia-Yida); He, YM (He, Yi-Ming); Lv, ZR (Lv, Zun-Ren); Zhang, ZK (Zhang, Zhong-Kai); Chai, HY (Chai, Hong-Yu); Lu, D (Lu, Dan); Yang, XG (Yang, Xiao-Guang); Yang, T (Yang, Tao)

Source: CRYSTALS Volume: 10 Issue: 11 Article Number: 980 DOI: 10.3390/cryst10110980 Published: NOV 2020

Abstract: Aiming to realize high-speed optical transmitters for isolator-free telecommunication systems, 1.3 mu m p-modulation doped InGaAs/GaAs quantum dot (QD) lasers with a 400 mu m long cavity have been reported. Compared with the un-doped QD laser as a reference, the p-doped QD laser emits at ground state, with an ultra-low threshold current and a high maximum output power. The p-doped QD laser also shows enhanced dynamic characteristics, with a 10 Gb/s large-signal direct modulation rate and a 7.8 GHz 3dB-bandwidth. In addition, the p-doped QD laser exhibits a strong coherent optical feedback resistance, which might be beyond -9 dB.

Accession Number: WOS:000593596500001

ISSN: 2073-4352

Full Text: https://www.mdpi.com/2073-4352/10/11/980