Author(s): Cao, ZK (Cao, Zikun); Zhao, DG (Zhao, Degang); Liang, F (Liang, Feng); Liu, ZS (Liu, Zongshun)

Source: MATERIALS RESEARCH EXPRESS Volume: 7 Issue: 11 Article Number: 115902 DOI: 10.1088/2053-1591/abca6e Published: NOV 2020

Abstract: In this paper, the fabrication process and structure of AlGaN based p-i-n photodetectors with different layer thicknesses are described. The maximum external quantum efficiency (EQE) of back illumination is 87.87% at zero bias. According to the Poisson equation, the electric field distribution of the devices is analysed, and a detailed method to estimate the reverse bias voltage required for the p-layer and i-layer to be completely depleted is proposed. The reliability of the method is also well proven by the responsivity measurement results under zero bias and reverse bias. Finally, based on the experimental data and theoretical calculation, the optimization method of p-layer and i-layer thickness in p-i-n photodetector is analysed.

Accession Number: WOS:000592334700001

eISSN: 2053-1591

Full Text: https://iopscience.iop.org/article/10.1088/2053-1591/abca6e