A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Tunable Dual Broadband Terahertz Metamaterial Absorber Based on Vanadium Dioxide

2020-11-26

Author(s): Jiao, XF (Jiao, Xiao-Fei); Zhang, ZH (Zhang, Zi-Heng); Li, T (Li, Tong); Xu, Y (Xu, Yun); Song, GF (Song, Guo-Feng)

Source: APPLIED SCIENCES-BASEL Volume: 10 Issue: 20 Article Number: 7259 DOI: 10.3390/app10207259 Published: OCT 2020

Abstract: With the rapid development of terahertz technology, tunable high-efficiency broadband functional devices have become a research trend. In this research, a dynamically tunable dual broadband terahertz absorber based on the metamaterial structure of vanadium dioxide (VO2) is proposed and analyzed. The metamaterial is composed of patterned VO2 on the top layer, gold on the bottom layer and silicon dioxide (SiO2) as the middle dielectric layer. Simulation results show that two bandwidths of 90% absorption reach as wide as 2.32 THz from 1.87 to 4.19 THz and 2.03 THz from 8.70 to 10.73 THz under normal incidence. By changing the conductivity of VO2, the absorptance dynamically tuned from 2% to 94%. Moreover, it is verified that absorptance is insensitive to the polarization angle. The physical origin of this absorber is revealed through interference theory and matching impedance theory. We further investigate the physical mechanism of dual broadband absorption through electric field analysis. This design has potential applications in imaging, modulation and stealth technology.

Accession Number: WOS:000586175100001

eISSN: 2076-3417

Full Text: https://www.mdpi.com/2076-3417/10/20/7259



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明