Author(s): Zhou, Y (Zhou, Yuan); Zhao, YW (Zhao, Youwen); Shen, GY (Shen, Guiying); Xie, H (Xie, Hui); Liu, JM (Liu, Jingming); Yang, J (Yang, Jun); Liu, LJ (Liu, Lijie)

Source: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Volume: 121 Article Number: 105460 DOI: 10.1016/j.mssp.2020.105460 Published: JAN 2021

Abstract: Raman spectroscopy has been used to characterize and compare residual stress distribution across wafers sliced from un-doped InP and InAs single crystals grown by liquid encapsulated Czochralski (LEC) and vertical tem-perature gradient freezing (VGF) methods, respectively. Both VGF-InP and VGF-InAs wafers exhibit greater residual stress but even distribution across the wafer than their LEC wafers. There is an inverse distribution correlation between the residual stress and the Full width at half maximum (FWHM) of Raman peak for the wafer grown by LEC or VGF method. The flatness results suggest that VGF-grown wafers generally have better flatness parameters but with higher residual stress than LEC-grown wafers.

Accession Number: WOS:000585294800002

ISSN: 1369-8001

eISSN: 1873-4081

Full Text: https://www.sciencedirect.com/science/article/pii/S1369800120313950?via%3Dihub