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Role of interfacial 2D graphene in high performance 3D graphene/germanium Schottky junction humidity sensors

2020-11-12

Author(s): Zhao, MH (Zhao, Menghan); Zhu, W (Zhu, Wei); Feng, XQ (Feng, Xiaoqiang); Yang, SW (Yang, Siwei); Liu, ZD (Liu, Zhiduo); Tang, SW (Tang, Shiwei); Chen, D (Chen, Da); Guo, QL (Guo, Qinglei); Wang, G (Wang, Gang); Ding, GQ (Ding, Guqiao)

Source: JOURNAL OF MATERIALS CHEMISTRY C Volume: 8 Issue: 40 Pages: 14196-14202 DOI: 10.1039/d0tc03853a Published: OCT 28 2020

Abstract: Three-dimensional graphene (3D-Gr) is an attractive nominee for humidity sensing due to its considerable specific surface area and excellent thermal properties. Nevertheless, in the current method of preparing 3D-Gr, amorphous carbon layers are added as an interfacial layer, which will reduce the thermal/electrical property of 3D-Gr-based devices. Herein, by employing two-dimensional graphene (2D-Gr) as an interfacial layer in plasma-assisted chemical vapor deposition (PACVD), in situ synthesis of 3D-Gr on a Ge substrate can improve its performance when used as a humidity sensor. The resulting 3D/2D-Gr/Ge hybrid architecture has excellent Schottky junction-based humidity sensing characteristics with the fastest response rate and recovery time at room temperature because of its enhanced thermal/electrical conductivity without multiple post-transfer processing steps being required during device fabrication. Furthermore, Joule heating dismisses physically adsorbed vapour molecules from the 3D/2D-Gr hybrid architecture, thus realizing the completely reversible operation thereof. The mechanism of humidity detection was explored by experiments and confirmed by scanning Kelvin probe microscopy (SKPM) and finite-difference time-domain (FDTD) simulation. The rational design of hybrid architecture with 2D-Gr has proven to be advantageous for developing the humidity sensing performances of the device.

Accession Number: WOS:000581559100027

ISSN: 2050-7526

eISSN: 2050-7534

Full Text: https://pubs.rsc.org/en/content/articlelanding/2020/TC/D0TC03853A#!divAbstract



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