Author(s): Yang, JJ (Yang, Junjie); Liu, ZZ (Liu, Zizhuo); Jurczak, P (Jurczak, Pamela); Tang, MC (Tang, Mingchu); Li, KS (Li, Keshuang); Pan, SJ (Pan, Shujie); Sanchez, A (Sanchez, Ana); Beanland, R (Beanland, Richard); Zhang, JC (Zhang, Jin-Chuan); Wang, H (Wang, Huan); Liu, FQ (Liu, Fengqi); Li, ZB (Li, Zhibo); Shutts, S (Shutts, Samuel); Smowton, P (Smowton, Peter); Chen, SM (Chen, Siming); Seeds, A (Seeds, Alwyn); Liu, HY (Liu, Huiyun)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 54 Issue: 3 Article Number: 035103 DOI: 10.1088/1361-6463/abbb49 Published: JAN 21 2021

Abstract: A high-performance III-V quantum-dot (QD) laser monolithically grown on Si is one of the most promising candidates for commercially viable Si-based lasers. Great efforts have been made to overcome the challenges due to the heteroepitaxial growth, including threading dislocations and anti-phase boundaries, by growing a more than 2 mu m thick III-V buffer layer. However, this relatively thick III-V buffer layer causes the formation of thermal cracks in III-V epi-layers, and hence a low yield of Si-based optoelectronic devices. In this paper, we demonstrate a usage of thin Ge buffer layer to replace the initial part of GaAs buffer layer on Si to reduce the overall thickness of the structure, while maintaining a low density of defects in III-V layers and hence the performance of the InAs/GaAs QD laser. A very high operating temperature of 130 degrees C has been demonstrated for an InAs/GaAs QD laser by this approach.

Accession Number: WOS:000582064400001

ISSN: 0022-3727

eISSN: 1361-6463

Full Text: https://iopscience.iop.org/article/10.1088/1361-6463/abbb49