Author(s): Peng, LZ (Peng, Linzhi); Li, XL (Li, Xiuli); Zheng, J (Zheng, Jun); Liu, XQ (Liu, Xiangquan); Li, MM (Li, Mingming); Liu, Z (Liu, Zhi); Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen)

Source: JOURNAL OF LUMINESCENCE Volume: 228 Article Number: 117539 DOI: 10.1016/j.jlumin.2020.117539 Published: DEC 2020

Abstract: Two Ge1-xSnx/Si0.1Ge0.85Sn0.05 (x = 7.3% and 8.5%) multi-quantum wells (MQWs) based light emitting diodes (LEDs) were designed and fabricated to achieve efficient light emission in the similar to 2 mu m wavelength band. Electroluminescence (EL) at wavelengths of 1980 nm (0.626 eV) and 2060 nm (0.602 eV) from the MQWs light emitting diodes were observed at room temperature. Super-linear dependence between the injected current density and EL intensity illustrates the high band-to-band radiative recombination efficiency. Theoretical calculations using deformation potentials theory reveal that the type-I band alignment is formed, and correspond well with the quantum confinement effect of the direct-bandgap transitions of n(1 Gamma)- n(1HH). These results indicate that GeSn/SiGeSn MQW-LEDs is a promising full group-IV silicon-based light source in the 2 mu m waveband.

Accession Number: WOS:000579805300059

ISSN: 0022-2313

eISSN: 1872-7883

Full Text: https://www.sciencedirect.com/science/article/pii/S0022231320304750?via%3Dihub