Author(s): Wang, XW (Wang, Xiaowei); Liang, F (Liang, Feng); Zhao, D (Zhao, Degang); Liu, ZS (Liu, Zongshun); Zhu, JJ (Zhu, Jianjun); Yang, J (Yang, Jing)

Source: NANOSCALE RESEARCH LETTERS Volume: 15 Issue: 1 Article Number: 191 DOI: 10.1186/s11671-020-03420-y Published: OCT 1 2020

Abstract: Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Accession Number: WOS:000576890100002

PubMed ID: 33001341

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Wang, Xiaowei                  0000-0003-0282-257X

ISSN: 1931-7573

eISSN: 1556-276X

Full Text: https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-020-03420-y