Author(s): Liu, Z (Liu, Zhi); Li, XL (Li, Xiuli); Niu, CQ (Niu, Chaoqun); Zheng, J (Zheng, Jun); Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen)

Source: PHOTONICS RESEARCH Volume: 8 Issue: 10 Pages: 1648-1652 DOI: 10.1364/PRJ.401140 Published: OCT 1 2020

Abstract: A high-speed evanescent-coupled Ge waveguide electro-absorption modulator (EAM) with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si layer. Selectively grown Ge with a triangle shape was directly used for Ge waveguides of the EAM. An asymmetric p-i-n junction was designed in the Ge waveguide to provide a strong electric field for Franz-Keldysh effect. The insertion loss of the Ge EAM was 6.2 dB at 1610 nm. The EAM showed the high electro-optic bandwidth of 36 GHz at -1 V. Clear open 56 Gbps eye diagrams were observed at 1610 nm with a dynamic extinction ratio of 2.7 dB and dynamic power consumption of 45 fJ/bit for voltage swing of 3V(pp). (C) 2020 Chinese Laser Press

Accession Number: WOS:000577372300016

ISSN: 2327-9125

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