A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Compact Low-Loss Optical 72 degrees Hybrid Based on Nonoverlapping-Image Multimode Interference Coupler in Silicon-on-Insulator

2020-10-15

Author(s): Li, ZZ (Li, Zezheng); Kuang, YX (Kuang, Yingxin); Guan, H (Guan, Huan); Liu, Y (Liu, Yang); Zhang, XQ (Zhang, Xinqun); Han, WH (Han, Weihua); Li, ZY (Li, Zhiyong)

Source: IEEE PHOTONICS JOURNAL Volume: 11 Issue: 6 Article Number: 7907309 DOI: 10.1109/JPHOT.2019.2956260 Published: DEC 2019

Abstract: A universal principle to achieve different optical hybrids is summarized based on general nonoverlapping-image MMI couplers. An optical 72 degrees hybrid is proposed and demonstrated which is achieved by a 2 x 5 multimode interference (MMI) coupler with length of 89.5 mu m and width of 8.0 mu m. The device is fabricated in silicon-on-insulator (SOI) with 220 nm thick top silicon layer and the buried oxide layer is 3 mu m thick. The proposed device exhibits an extinction ratio larger than 20 dB from 1470.8 nm to 1581.2 nm. The excess loss of optical hybrid is about 1.4 dB and a phase deviation less than +/- 6.0 degrees is obtained with the bandwidth of 51.5 nm.

Accession Number: WOS:000575108400001

ISSN: 1943-0655

eISSN: 1943-0647

Full Text: https://ieeexplore.ieee.org/document/8915737/



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明