Author(s): Yang, MM (Yang, Mingming); Wang, LL (Wang, Longlong); Qiao, XF (Qiao, Xiaofen); Liu, Y (Liu, Yi); Liu, YF (Liu, Yufan); Shi, YF (Shi, Yafang); Wu, HL (Wu, Hongli); Liang, BL (Liang, Baolai); Li, XL (Li, Xiaoli); Zhao, XH (Zhao, Xiaohui)

Source: NANOSCALE RESEARCH LETTERS Volume: 15 Issue: 1 Article Number: 189 DOI: 10.1186/s11671-020-03414-w Published: SEP 30 2020

Abstract: The defects into the hexagonal network of a sp(2)-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D' band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D' band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D' band. It derives from the related electron-phonon interaction in G and D' phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

Accession Number: WOS:000574230100001

PubMed ID: 32997231

ISSN: 1931-7573

eISSN: 1556-276X

Full Text: https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-020-03414-w