Author(s): Tan, QH (Tan, Qing-Hai); Sun, YJ (Sun, Yu-Jia); Liu, XL (Liu, Xue-Lu); Xu, KX (Xu, Kai-Xuan); Gao, YF (Gao, Yuan-Fei); Ren, SL (Ren, Shu-Liang); Tan, PH (Tan, Ping-Heng); Zhang, J (Zhang, Jun)

Source: NANO RESEARCH DOI: 10.1007/s12274-020-3075-3 Early Access Date: SEP 2020

Abstract: The polarization selection rule of Raman scattering is crucial in symmetry analysis of elementary excitations in semiconductors and correlated electron systems. Here we reported the observation of breakdown of Raman selection rules in few-layer WS(2)by using resonant Raman spectroscopy. When the excitation energy is close to the dark A exciton state, we observed some infrared active modes and backscattering forbidden modes. Importantly, we found that all observed phonon modes follow the same paralleled-polarization behavior. According to the electron-phonon coupling near the band edge in WS2, we proposed a theoretical model based on the intraband Frohlich interaction. In this case, the polarization response of the scattering signal is no longer determined by the original Raman tensor of scattered phonons. Instead, it is determined by a new isotropic Raman tensor that generated from this intraband Frohlich interaction between dark A exciton and phonons. We found that this theoretical model is in excellent agreement with the observed results. The breakdown of Raman selection rules can violate the conventional limitations of the optical response and provide an effective method to control the polarization of Raman scattering signals in two-dimensional materials.

Accession Number: WOS:000574104100007

ISSN: 1998-0124

eISSN: 1998-0000

Full Text: https://link.springer.com/article/10.1007/s12274-020-3075-3