A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Spin-flip manipulation in HgTe/CdTe heterostructure interface states with Rashba and Dresselhuas spin-orbit interactions

2020-10-15

Author(s): Lin, LZ (Lin, Liangzhong); Liu, YF (Liu, Yanfei); Yu, JH (Yu, Jiahan); Zhu, JJ (Zhu, Jiaji); Zhang, D (Zhang, Dong); Wu, ZH (Wu, Zhenhua)

Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 125 Article Number: 114427 DOI: 10.1016/j.physe.2020.114427 Published: JAN 2021

Abstract: We investigate theoretically the electron transport through (001) HgTe/CdTe quantum well heterostructures with inverted-band in planar geometry, where Dirac-like spin-momentum locked interface states have been predicted to be formed and topologically protected against perturbations preserving time-reversal symmetry. In this work, k.p theory and scattering matrix method are used to characterize the interface states of the (001) HgTe/CdTe heterostructure as well as to understand the influence of external electric fields. We find distinct features of the transmission and conductance by considering both Rashba and Dresselhuas spin-orbit interactions. The efficient spin-flip conversion between spin-up and spin-down channels are found by tuning the strength of Rashba and Dresselhuas spin-orbit interactions. It is shown that ideal spin-flip efficiency, i.e., the complete spin-flip, can be achieved with specific spin-orbit coupling strengths. This spin-flip mechanism provides us a realistic way to manipulate the spin orientation which can be constructed low-power information processing device. Furthermore, we address the topological edge states induced unique spin manipulation capability by comparing with the conventional electron transport properties in bulk states. In addition, we analyze the transport behavior when the system in the presence of Zeeman term which may play an important role for a high magnetic field in a realistic experimental setup.

Accession Number: WOS:000573541500006

ISSN: 1386-9477

eISSN: 1873-1759

Full Text: https://www.sciencedirect.com/science/article/pii/S1386947720307244?via%3Dihub



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明