Author(s): Shen, ZW (Shen, Zhanwei); Zhang, F (Zhang, Feng); Yan, GG (Yan, Guoguo); Wen, ZX (Wen, Zhengxin); Zhao, WS (Zhao, Wanshun); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Sun, GS (Sun, Guosheng); Zeng, YP (Zeng, Yiping)

Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 67 Issue: 10 Pages: 4046-4053 DOI: 10.1109/TED.2020.3005899 Published: OCT 2020

Abstract: A reverse-channel 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (UMOSFET) (RC-MOS) is proposed in this article. The RC-MOS is demonstrated to have low specific ON-resistance (R-ON,R- sp) by numerical simulation. The trench oxide in the RC-MOS is fully protected by the n+ source, the p-shield, and the p-base regions. Thus, a reduced trench corner field far below 3MV/cm can be achieved in both the OFF- and ON-state. Furthermore, the gate-to-drain charge (QGD) of the RC-MOS is 33 nC/cm(2), which is much lower than that of the dual buffer layer MOSFET (DB-MOS), owing to little overlap between the gate and drain electrodes. Consequently, the RC-MOS exhibits the superior figures of merit Q(GD) x R-ON,R- sp = 82 m Omega center dot nC. Due to the low reverse transfer capacitance and gate charges in the RC-MOS, the total switching loss of 570 mu J/cm(2) is decreased by 64.5% in comparison to that of the DB-MOS. These superior properties show that the proposed UMOSFET can be a good candidate for further improvements in the gate oxide reliability and high-frequency performance of SiC MOSFETs.

Accession Number: WOS:000572635400019

ISSN: 0018-9383

eISSN: 1557-9646

Full Text: https://ieeexplore.ieee.org/document/9142412