A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

K+ doping effect on grain boundary passivation and photoelectronics properties of NiOx/perovskite films

2020-10-10

Author(s): Zhou, ZX (Zhou, Zixiao); Zou, XP (Zou, Xiaoping); Zhu, JL (Zhu, Jialin); Cheng, J (Cheng, Jin); Ren, HY (Ren, Haiyan); Chang, CC (Chang, Chuangchuang); Yao, YJ (Yao, Yujun); Chen, D (Chen, Dan); Yu, X (Yu, Xing); Li, GD (Li, Guangdong); Wang, JQ (Wang, Junqi); Liu, BY (Liu, Baoyu)

Source: CHEMICAL PHYSICS LETTERS Volume: 757 Article Number: 137882 DOI: 10.1016/j.cplett.2020.137882 Published: OCT 16 2020

Abstract: As a new type of solar cells, perovskite solar cells (PSCs) have received widespread attention. The grain growth and surface morphology of perovskite thin films are considered to have an important influence on the perfor-mance of PSCs. In this paper, the K+ was introduced into the CH3NH3PbI3 (MAPbI(3)) and the effect of different doping concentration on the morphology, photophysical properties, and semiconductor characteristics of the perovskite films was investigated. From experiments, we found that the incorporation of low-concentration K+ has a passivation effect on the grain boundaries, which reduces the defect density at interface. The phase transition and obvious red shift of MAPbI(3) could be seen under high doping concentration in XRD pattern and absorption spectrum, respectively. The modulation of the perovskite layer major charge carrier type was ob-served when K+ was introduced, which laid a basis for future investigation on inverted homo-junction solar cells.

Accession Number: WOS:000571892900008

ISSN: 0009-2614

eISSN: 1873-4448

Full Text: https://www.sciencedirect.com/science/article/pii/S0009261420307971?via%3Dihub



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明