Author(s): Zhang, ZK (Zhang, Zhongkai); Lu, ZR (Lu, Zunren); Yang, XG (Yang, Xiaoguang); Chai, HY (Chai, Hongyu); Meng, L (Meng, Lei); Yang, T (Yang, Tao)

Source: CHINESE OPTICS LETTERS Volume: 18 Issue: 7 Article Number: 071401 DOI: 10.3788/COL202018.071401 Published: JUL 10 2020

Abstract: We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 mu m InAs/GaAs quantum dot (QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped InAs QDs with high uniformity and density. Ridge-waveguide lasers with a 3-mu m-wide and 300-mu m-long cavity show a low threshold current of 14.4 mA at 20 degrees C and high temperature stability with a high characteristic temperature of 1208 K between 20 degrees C and 70 degrees C. Dynamic response measurements demonstrate that the laser has a 3 dB bandwidth of 7.7 GHz at 20 degrees C and clearly opened eye diagrams even at high temperatures up to 75 degrees C under a 25 Gb/s direct modulation rate.

Accession Number: WOS:000569163800011

ISSN: 1671-7694

Full Text: http://www.clp.ac.cn/EN/Article/OJ9ab29ce86df58aaa