Author(s): Chen, Q (Chen, Qi); Yin, Y (Yin, Yue); Ren, F (Ren, Fang); Liang, M (Liang, Meng); Yi, XY (Yi, Xiaoyan); Liu, ZQ (Liu, Zhiqiang)

Source: MATERIALS Volume: 13 Issue: 17 Article Number: 3835 DOI: 10.3390/ma13173835 Published: SEP 2020

Abstract: III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected.

Accession Number: WOS:000569693800001

PubMed ID: 32878046

eISSN: 1996-1944

Full Text: https://www.mdpi.com/1996-1944/13/17/3835