Author(s): Bu, TZ (Bu, Tianzhao); Xu, L (Xu, Liang); Yang, ZW (Yang, Zhiwei); Yang, X (Yang, Xiang); Liu, GX (Liu, Guoxu); Cao, YZ (Cao, Yuanzhi); Zhang, C (Zhang, Chi); Wang, ZL (Wang, Zhong Lin)

Source: NATURE COMMUNICATIONS Volume: 11 Issue: 1 Article Number: 1054 DOI: 10.1038/s41467-020-14909-6 Published: FEB 26 2020

Abstract: Tribotronics has attracted great attention owing to the demonstrated triboelectrification-controlled electronics and established direct modulation mechanism by external mechanical stimuli. Here, a nanoscale triboelectrification-gated transistor has been studied with contact-mode atomic force microscopy and scanning Kevin probe microscopy. The detailed working principle was analyzed at first, in which the nanoscale triboelectrification can tune the carrier transport in the transistor. Then with the manipulated nanoscale triboelectrification, the effects of contact force, scan speed, contact cycles, contact region and charge diffusion on the transistor were investigated, respectively. Moreover, the manipulated nanoscale triboelectrification serving as a rewritable floating gate has demonstrated different modulation effects by an applied tip voltage. This work has realized the nanoscale triboelectric modulation on electronics, which could provide a deep understanding for the theoretical mechanism of tribotronics and may have great applications in nanoscale transistor, micro/nano-electronic circuit and nano-electromechanical system.

Accession Number: WOS:000564291400001

PubMed ID: 32103025

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Bu, Tianzhao                  0000-0003-1295-7080

ISSN: 2041-1723

Full Text: https://www.nature.com/articles/s41467-020-14909-6