Author(s): Shang, XJ (Shang, Xiangjun); Ma, B (Ma, Ben); Ni, HQ (Ni, Haiqiao); Chen, ZS (Chen, Zesheng); Li, SL (Li, Shulun); Chen, Y (Chen, Yao); He, XW (He, Xiaowu); Su, XL (Su, Xingliang); Shi, YJ (Shi, Yujun); Niu, ZC (Niu, Zhichuan)

Source: AIP ADVANCES Volume: 10 Issue: 8 Article Number: 085126 DOI: 10.1063/5.0019041 Published: AUG 1 2020

Abstract: InAs/GaAs quantum dots (QDs) grown on a GaAs (001) substrate were studied by photoluminescence spectroscopy. Both C-2v and D-3h QDs with featured XX11, X-11(+), and XX21+ spectra have been found. A local defect field tunes the dominant exciton from X+ to X or X-, enhances the population on XX, XXX, and XXX-, and induces tunneling and spectral diffusion. In D-3h QDs, it also induces a prior e(1)-h(2) transition and a structural polarization of XX21+ and XX11 to build a direct cascade XX21+ - X+. Both XX21+ - X+ and XX - X have no fine structure splitting, promising for entangled photon pair emission. A dominant X+ with slow electron capture (due to background holes) proves a pure single-photon emission. (c) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Accession Number: WOS:000564222100003

eISSN: 2158-3226

Full Text: https://aip.scitation.org/doi/10.1063/5.0019041