1 550 nm VCSELs for long-reach optical interconnects
Author(s): Liu, LJ (Liu Li-Jie); Wu, YD (Wu Yuan-Da); Wang, Y (Wang Yue); Wang, LL (Wang Liang-Liang); An, JM (An Jun-Ming); Zhao, YW (Zhao You-Wen)
Source: JOURNAL OF INFRARED AND MILLIMETER WAVES Volume: 39 Issue: 4 Pages: 397-400 DOI: 10.11972/j.issn.1001-9014.2020.04.001 Published: AUG 2020
Abstract: Long-wavelength VCSELs on an InP substrate was designed and fabricated with an active layer of 1550 nm. The top Distributed Bragg Reflection (DBR) mirror system has been constructed by fabricating 4. 5 pairs of SiO2/Si top DBRs. The threshold current was 20 mA and maximum output power around 7 mu W under continuous wave (CW) operation at room temperature. More importantly, the lasing spectrum is 1554 nm and the full width at half maximum is 3 nm.
Accession Number: WOS:000562552700001
ISSN: 1001-9014
Full Text: http://journal.sitp.ac.cn/hwyhmb/hwyhmbcn/ch/reader/view_abstract.aspx?file_no=2019354