Author(s): Ma, XL (Ma, Xiaolei); Jiang, XW (Jiang, Xiangwei); Li, Y (Li, Yuan); Chen, JZ (Chen, Jiezhi)

Source: APPLIED PHYSICS EXPRESS Volume: 13 Issue: 2 Article Number: 021004 Published: FEB 1 2020

Abstract: We report the physical origins of Schottky-barrier height (SBH) modulations at the interface of germanium (Ge) and monolayer transition metal dichalcogenides (TMDs) through ab initio calculations. The effects of surface passivation with hydrogen or fluorine as well as interfacial layer (IL) engineering using hexagonal boron nitride (h-BN) or graphene are discussed. H-/F- passivation can change the intrinsic contact of Ge and TMDs inton-andp-type contacts, respectively. More importantly, an idealp-type contact with vanished SBH could be achieved by usingh-BN as the IL. This approach holds promises to the integration of TMDs on Ge-based devices.

Accession Number: WOS:000554915300001

ISSN: 1882-0778

eISSN: 1882-0786

Full Text: https://iopscience.iop.org/article/10.35848/1882-0786/ab6f2a